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1. product pro?le 1.1 general description low capacitance unidirectional quadruple electrostatic discharge (esd) protection diode arrays in small surface-mounted device (smd) plastic packages designed to protect up to four signal lines from the damage caused by esd and other transients. 1.2 features 1.3 applications pesdxl4uf; pesdxl4ug; pesdxl4uw low capacitance unidirectional quadruple esd protection diode arrays rev. 04 28 february 2008 product data sheet table 1. product overview type number package package con?guration nxp jeita jedec PESD3V3L4UF sot886 - mo-252 leadless ultra small pesd5v0l4uf sot886 - mo-252 leadless ultra small pesd3v3l4ug sot353 sc-88a - very small pesd5v0l4ug sot353 sc-88a - very small pesd3v3l4uw sot665 - - ultra small and ?at lead pesd5v0l4uw sot665 - - ultra small and ?at lead n esd protection of up to four lines n ultra low leakage current: i rm =5na n low diode capacitance n esd protection up to 20 kv n max. peak pulse power: p pp =30w n iec 61000-4-2; level 4 (esd) n low clamping voltage: v cl =12v n iec 61000-4-5 (surge); i pp = 2.5 a n computers and peripherals n communication systems n audio and video equipment n portable electronics n cellular handsets and accessories n subscriber identity module (sim) card protection
pesdxl4uf_g_w_4 ? nxp b.v. 2008. all rights reserved. product data sheet rev. 04 28 february 2008 2 of 17 nxp semiconductors pesdxl4uf/g/w low capacitance unidirectional quadruple esd protection diode arrays 1.4 quick reference data 2. pinning information table 2. quick reference data t amb =25 c unless otherwise speci?ed. symbol parameter conditions min typ max unit per diode v rwm reverse standoff voltage PESD3V3L4UF pesd3v3l4ug pesd3v3l4uw - - 3.3 v pesd5v0l4uf pesd5v0l4ug pesd5v0l4uw - - 5.0 v c d diode capacitance f = 1 mhz; v r =0v PESD3V3L4UF pesd3v3l4ug pesd3v3l4uw - 2228pf pesd5v0l4uf pesd5v0l4ug pesd5v0l4uw - 1619pf table 3. pinning pin description simpli?ed outline symbol PESD3V3L4UF; pesd5v0l4uf 1 cathode (diode 1) 2 common anode 3 cathode (diode 2) 4 cathode (diode 3) 5 common anode 6 cathode (diode 4) pesd3v3l4ug; pesd5v0l4ug 1 cathode (diode 1) 2 common anode 3 cathode (diode 2) 4 cathode (diode 3) 5 cathode (diode 4) pesd3v3l4uw; pesd5v0l4uw 1 cathode (diode 1) 2 common anode 3 cathode (diode 2) 4 cathode (diode 3) 5 cathode (diode 4) bottom view 3 2 1 4 5 6 006aaa156 6 1 5 2 4 3 13 2 4 5 006aaa157 5 1 2 4 3 123 4 5 006aaa157 5 1 2 4 3
pesdxl4uf_g_w_4 ? nxp b.v. 2008. all rights reserved. product data sheet rev. 04 28 february 2008 3 of 17 nxp semiconductors pesdxl4uf/g/w low capacitance unidirectional quadruple esd protection diode arrays 3. ordering information 4. marking [1] * = -: made in hong kong * = p: made in hong kong * = t: made in malaysia * = w: made in china 5. limiting values table 4. ordering information type number package name description version PESD3V3L4UF xson6 plastic extremely thin small outline package; no leads; 6 terminals; body 1 1.45 0.5 mm sot886 pesd5v0l4uf pesd3v3l4ug sc-88a plastic surface-mounted package; 5 leads sot353 pesd5v0l4ug pesd3v3l4uw - plastic surface-mounted package; 5 leads sot665 pesd5v0l4uw table 5. marking codes type number marking code [1] PESD3V3L4UF a5 pesd5v0l4uf a6 pesd3v3l4ug l1* pesd5v0l4ug l2* pesd3v3l4uw a2 pesd5v0l4uw a1 table 6. limiting values in accordance with the absolute maximum rating system (iec 60134). symbol parameter conditions min max unit per diode p pp peak pulse power t p = 8/20 m s [1] [2] [3] -30w i pp peak pulse current t p = 8/20 m s [1] [2] [3] PESD3V3L4UF pesd3v3l4ug pesd3v3l4uw - 3.0 a pesd5v0l4uf pesd5v0l4ug pesd5v0l4uw - 2.5 a i fsm non-repetitive peak forward current square wave; t p =1ms - 3.5 a
pesdxl4uf_g_w_4 ? nxp b.v. 2008. all rights reserved. product data sheet rev. 04 28 february 2008 4 of 17 nxp semiconductors pesdxl4uf/g/w low capacitance unidirectional quadruple esd protection diode arrays [1] non-repetitive current pulse 8/20 m s exponential decay waveform according to iec 61000-4-5. [2] for pesdxl4uf measured from pin 1, 3, 4 or 6 to pin 2 or 5. [3] for pesdxl4ug and pesdxl4uw measured from pin 1, 3, 4 or 5 to pin 2. [1] device stressed with ten non-repetitive esd pulses. [2] for pesdxl4uf measured from pin 1, 3, 4 or 6 to pin 2 or 5. [3] for pesdxl4ug and pesdxl4uw measured from pin 1, 3, 4 or 5 to pin 2. i zsm non-repetitive peak reverse current square wave; t p =1ms PESD3V3L4UF pesd3v3l4ug pesd3v3l4uw - 0.9 a pesd5v0l4uf pesd5v0l4ug pesd5v0l4uw - 0.8 a p zsm non-repetitive peak reverse power dissipation square wave; t p =1ms -6w per device t j junction temperature - 150 c t amb ambient temperature - 65 +150 c t stg storage temperature - 65 +150 c table 7. esd maximum ratings t amb =25 c unless otherwise speci?ed. symbol parameter conditions min max unit per diode v esd electrostatic discharge voltage iec 61000-4-2 (contact discharge) [1] [2] [3] -20kv mil-std-883 (human body model) -10kv table 8. esd standards compliance standard conditions per diode iec 61000-4-2; level 4 (esd) > 15 kv (air); > 8 kv (contact) mil-std-883; class 3 (human body model) > 4 kv table 6. limiting values continued in accordance with the absolute maximum rating system (iec 60134). symbol parameter conditions min max unit
pesdxl4uf_g_w_4 ? nxp b.v. 2008. all rights reserved. product data sheet rev. 04 28 february 2008 5 of 17 nxp semiconductors pesdxl4uf/g/w low capacitance unidirectional quadruple esd protection diode arrays 6. characteristics fig 1. 8/20 m s pulse waveform according to iec 61000-4-5 fig 2. esd pulse waveform according to iec 61000-4-2 t ( m s) 040 30 10 20 001aaa630 40 80 120 i pp (%) 0 e - t 100 % i pp ; 8 m s 50 % i pp ; 20 m s 001aaa631 i pp 100 % 90 % t 30 ns 60 ns 10 % t r = 0.7 ns to 1 ns table 9. characteristics t amb =25 c unless otherwise speci?ed. symbol parameter conditions min typ max unit per diode v rwm reverse standoff voltage PESD3V3L4UF pesd3v3l4ug pesd3v3l4uw - - 3.3 v pesd5v0l4uf pesd5v0l4ug pesd5v0l4uw - - 5.0 v i rm reverse leakage current PESD3V3L4UF pesd3v3l4ug pesd3v3l4uw v rwm = 3.3 v - 75 300 na pesd5v0l4uf pesd5v0l4ug pesd5v0l4uw v rwm = 5.0 v - 5 25 na v br breakdown voltage i r =1ma PESD3V3L4UF pesd3v3l4ug pesd3v3l4uw 5.32 5.6 5.88 v pesd5v0l4uf pesd5v0l4ug pesd5v0l4uw 6.46 6.8 7.14 v
pesdxl4uf_g_w_4 ? nxp b.v. 2008. all rights reserved. product data sheet rev. 04 28 february 2008 6 of 17 nxp semiconductors pesdxl4uf/g/w low capacitance unidirectional quadruple esd protection diode arrays [1] non-repetitive current pulse 8/20 m s exponential decay waveform according to iec 61000-4-5. [2] for pesdxl4uf measured from pin 1, 3, 4 or 6 to pin 2 or 5. [3] for pesdxl4ug and pesdxl4uw measured from pin 1, 3, 4 or 5 to pin 2. c d diode capacitance f = 1 mhz; v r =0v PESD3V3L4UF pesd3v3l4ug pesd3v3l4uw - 2228pf pesd5v0l4uf pesd5v0l4ug pesd5v0l4uw - 1619pf v cl clamping voltage [1] [2] [3] PESD3V3L4UF pesd3v3l4ug pesd3v3l4uw i pp =1a --8v PESD3V3L4UF pesd3v3l4ug pesd3v3l4uw i pp =3a --12v pesd5v0l4uf pesd5v0l4ug pesd5v0l4uw i pp =1a --10v pesd5v0l4uf pesd5v0l4ug pesd5v0l4uw i pp = 2.5 a - - 13 v r dif differential resistance i r =1ma PESD3V3L4UF pesd3v3l4ug pesd3v3l4uw - - 200 w pesd5v0l4uf pesd5v0l4ug pesd5v0l4uw - - 100 w table 9. characteristics continued t amb =25 c unless otherwise speci?ed. symbol parameter conditions min typ max unit
pesdxl4uf_g_w_4 ? nxp b.v. 2008. all rights reserved. product data sheet rev. 04 28 february 2008 7 of 17 nxp semiconductors pesdxl4uf/g/w low capacitance unidirectional quadruple esd protection diode arrays t amb =25 c (1) PESD3V3L4UF; pesd3v3l4ug; pesd3v3l4uw (2) pesd5v0l4uf; pesd5v0l4ug; pesd5v0l4uw t amb =25 c (1) PESD3V3L4UF; pesd3v3l4ug; pesd3v3l4uw (2) pesd5v0l4uf; pesd5v0l4ug; pesd5v0l4uw fig 3. non-repetitive peak reverse current as a function of pulse duration; maximum values fig 4. non-repetitive peak reverse power dissipation as a function of pulse duration; maximum values f = 1 mhz; t amb =25 c (1) PESD3V3L4UF; pesd3v3l4ug; pesd3v3l4uw (2) pesd5v0l4uf; pesd5v0l4ug; pesd5v0l4uw fig 5. diode capacitance as a function of reverse voltage; typical values fig 6. relative variation of reverse current as a function of junction temperature; typical values 006aab134 t p (ms) 10 - 2 10 1 10 - 1 1 10 i zsm (a) 10 - 1 (1) (2) 006aab135 t p (ms) 10 - 2 10 1 10 - 1 10 10 2 p zsm (w) 1 (1) (2) 006aab136 v r (v) 05 4 23 1 14 18 10 22 26 c d (pf) 6 (1) (2) 006aab137 t j ( c) - 75 - 25 175 125 25 75 1 10 10 - 1 i r i r(25 c)
pesdxl4uf_g_w_4 ? nxp b.v. 2008. all rights reserved. product data sheet rev. 04 28 february 2008 8 of 17 nxp semiconductors pesdxl4uf/g/w low capacitance unidirectional quadruple esd protection diode arrays fig 7. v-i characteristics for a unidirectional esd protection diode 006aaa407 - v cl - v br - v rwm - i rm - i r - i pp v i p-n - +
pesdxl4uf_g_w_4 ? nxp b.v. 2008. all rights reserved. product data sheet rev. 04 28 february 2008 9 of 17 nxp semiconductors pesdxl4uf/g/w low capacitance unidirectional quadruple esd protection diode arrays fig 8. esd clamping test setup and waveforms 006aab138 50 w r z c z vertical scale = 200 v/div horizontal scale = 50 ns/div unclamped +1 kv esd voltage waveform (iec 61000-4-2 network) clamped +1 kv esd voltage waveform (iec 61000-4-2 network) unclamped - 1 kv esd voltage waveform (iec 61000-4-2 network) clamped - 1 kv esd voltage waveform (iec 61000-4-2 network) vertical scale = 200 v/div horizontal scale = 50 ns/div vertical scale = 5 v/div horizontal scale = 50 ns/div gnd gnd gnd2 gnd1 gnd 450 w rg 223/u 50 w coax esd tester iec 61000-4-2 network c z = 150 pf; r z = 330 w digitizing oscilloscope 10 attenuator (1) dut device under test vertical scale = 5 v/div horizontal scale = 50 ns/div (1): attenuator is only used for open socket high voltage measurements pesd5v0l4uf/g/w PESD3V3L4UF/g/w
pesdxl4uf_g_w_4 ? nxp b.v. 2008. all rights reserved. product data sheet rev. 04 28 february 2008 10 of 17 nxp semiconductors pesdxl4uf/g/w low capacitance unidirectional quadruple esd protection diode arrays 7. application information the devices are designed for the protection of up to four unidirectional data or signal lines from the damage caused by esd and surge pulses. the devices may be used on lines where the signal polarities are both, positive and negative with respect to ground. the devices provide a surge capability of 30 w per line for an 8/20 m s waveform each. circuit board layout and protection device placement circuit board layout is critical for the suppression of esd, electrical fast transient (eft) and surge transients. the following guidelines are recommended: 1. place the device as close to the input terminal or connector as possible. 2. the path length between the device and the protected line should be minimized. 3. keep parallel signal paths to a minimum. 4. avoid running protected conductors in parallel with unprotected conductors. 5. minimize all printed-circuit board (pcb) conductive loops including power and ground loops. 6. minimize the length of the transient return path to ground. 7. avoid using shared transient return paths to a common ground point. 8. ground planes should be used whenever possible. for multilayer pcbs, use ground vias. fig 9. application diagram 006aab126 data- or transmission lines n.c. unidirectional protection of 4 lines dut 1 2 3 5 4 bidirectional protection of 3 lines dut 1 2 3 5 4
pesdxl4uf_g_w_4 ? nxp b.v. 2008. all rights reserved. product data sheet rev. 04 28 february 2008 11 of 17 nxp semiconductors pesdxl4uf/g/w low capacitance unidirectional quadruple esd protection diode arrays 8. package outline fig 10. package outline pesdxl4uf (sot886) fig 11. package outline pesdxl4ug (sot353/sc-88a) fig 12. package outline pesdxl4uw (sot665) 04-07-22 dimensions in mm 0.25 0.17 0.40 0.32 0.35 0.27 0.5 0.6 1.05 0.95 1.5 1.4 0.5 0.50 max 0.04 max 3 2 1 4 5 6 04-11-16 dimensions in mm 0.25 0.10 0.3 0.2 1.3 0.65 2.2 2.0 1.35 1.15 2.2 1.8 1.1 0.8 0.45 0.15 13 2 4 5 dimensions in mm 04-11-08 1.7 1.5 1.7 1.5 1.3 1.1 1 0.18 0.08 0.27 0.17 0.5 123 4 5 0.6 0.5 0.3 0.1
pesdxl4uf_g_w_4 ? nxp b.v. 2008. all rights reserved. product data sheet rev. 04 28 february 2008 12 of 17 nxp semiconductors pesdxl4uf/g/w low capacitance unidirectional quadruple esd protection diode arrays 9. packing information [1] for further information and the availability of packing methods, see section 13 . [2] t1: normal taping [3] t4: 90 rotated reverse taping [4] t2: reverse taping 10. soldering table 10. packing methods the indicated -xxx are the last three digits of the 12nc ordering code. [1] type number package description packing quantity 3000 4000 5000 8000 10000 PESD3V3L4UF sot886 4 mm pitch, 8 mm tape and reel; t1 [2] - - -115 - - 4 mm pitch, 8 mm tape and reel; t4 [3] - - -132 - - pesd5v0l4uf sot886 4 mm pitch, 8 mm tape and reel; t1 [2] - - -115 - - 4 mm pitch, 8 mm tape and reel; t4 [3] - - -132 - - pesd3v3l4ug sot353 4 mm pitch, 8 mm tape and reel; t1 [2] -115 - - - -135 4 mm pitch, 8 mm tape and reel; t2 [4] -125 - - - -165 pesd5v0l4ug sot353 4 mm pitch, 8 mm tape and reel; t1 [2] -115 - - - -135 4 mm pitch, 8 mm tape and reel; t2 [4] -125 - - - -165 pesd3v3l4uw sot665 2 mm pitch, 8 mm tape and reel - - - -315 - 4 mm pitch, 8 mm tape and reel - -115 - - - pesd5v0l4uw sot665 2 mm pitch, 8 mm tape and reel - - - -315 - 4 mm pitch, 8 mm tape and reel - -115 - - - re?ow soldering is the only recommended soldering method. fig 13. re?ow soldering footprint pesdxl4uf (sot886) sot886_fr solder lands occupied area solder paste dimensions in mm 0.425 (6 ) 1.250 0.675 1.700 0.325 (6 ) 0.270 (6 ) 0.370 (6 ) 0.500 0.500
pesdxl4uf_g_w_4 ? nxp b.v. 2008. all rights reserved. product data sheet rev. 04 28 february 2008 13 of 17 nxp semiconductors pesdxl4uf/g/w low capacitance unidirectional quadruple esd protection diode arrays fig 14. re?ow soldering footprint pesdxl4ug (sot353/sc-88a) dimensions in mm fig 15. wave soldering footprint pesdxl4ug (sot353/sc-88a) sot353_fr solder resist occupied area solder lands solder paste dimensions in mm 0.60 (1 ) 0.50 (4 ) 0.50 (4 ) 2.65 0.40 0.90 1.20 2.40 2.10 2.35 solder lands solder resist occupied area 1.15 3.75 transport direction during soldering 1.00 0.30 4.00 0.70 4.50 2.65 2.25 2.70
pesdxl4uf_g_w_4 ? nxp b.v. 2008. all rights reserved. product data sheet rev. 04 28 february 2008 14 of 17 nxp semiconductors pesdxl4uf/g/w low capacitance unidirectional quadruple esd protection diode arrays re?ow soldering is the only recommended soldering method. fig 16. re?ow soldering footprint pesdxl4uw (sot665) 2.45 2.10 0.30 0.15 (2x) 0.375 (2 ) 0.45 (2 ) 0.70 (2 ) 0.40 (5 ) 0.55 1.60 1.20 2.20 1.25 1.375 2.00 1.70 1.00 solder lands solder resist placement area occupied area 0.075 dimensions in mm
pesdxl4uf_g_w_4 ? nxp b.v. 2008. all rights reserved. product data sheet rev. 04 28 february 2008 15 of 17 nxp semiconductors pesdxl4uf/g/w low capacitance unidirectional quadruple esd protection diode arrays 11. revision history table 11. revision history document id release date data sheet status change notice supersedes pesdxl4uf_g_w_4 20080228 product data sheet - pesdxl4uf_g_w_3 modi?cations: ? figure 8 esd clamping test setup and w a v ef or ms : amended pesdxl4uf_g_w_3 20080114 product data sheet - pesdxl4uw_ser_2 pesdxl4ug_series_1 pesdxl4uw_ser_2 20040406 product speci?cation - pesdxl4uw_series_1 pesdxl4ug_series_1 20040323 product speci?cation - -
pesdxl4uf_g_w_4 ? nxp b.v. 2008. all rights reserved. product data sheet rev. 04 28 february 2008 16 of 17 nxp semiconductors pesdxl4uf/g/w low capacitance unidirectional quadruple esd protection diode arrays 12. legal information 12.1 data sheet status [1] please consult the most recently issued document before initiating or completing a design. [2] the term short data sheet is explained in section de?nitions. [3] the product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple dev ices. the latest product status information is available on the internet at url http://www .nxp .com . 12.2 de?nitions draft the document is a draft version only. the content is still under internal review and subject to formal approval, which may result in modi?cations or additions. nxp semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. short data sheet a short data sheet is an extract from a full data sheet with the same product type number(s) and title. a short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. for detailed and full information see the relevant full data sheet, which is available on request via the local nxp semiconductors sales of?ce. in case of any inconsistency or con?ict with the short data sheet, the full data sheet shall prevail. 12.3 disclaimers general information in this document is believed to be accurate and reliable. however, nxp semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. right to make changes nxp semiconductors reserves the right to make changes to information published in this document, including without limitation speci?cations and product descriptions, at any time and without notice. this document supersedes and replaces all information supplied prior to the publication hereof. suitability for use nxp semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an nxp semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. nxp semiconductors accepts no liability for inclusion and/or use of nxp semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customers own risk. applications applications that are described herein for any of these products are for illustrative purposes only. nxp semiconductors makes no representation or warranty that such applications will be suitable for the speci?ed use without further testing or modi?cation. limiting values stress above one or more limiting values (as de?ned in the absolute maximum ratings system of iec 60134) may cause permanent damage to the device. limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the characteristics sections of this document is not implied. exposure to limiting values for extended periods may affect device reliability. terms and conditions of sale nxp semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www .nxp .com/pro? le/ter ms , including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by nxp semiconductors. in case of any inconsistency or con?ict between information in this document and such terms and conditions, the latter will prevail. no offer to sell or license nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. 12.4 trademarks notice: all referenced brands, product names, service names and trademarks are the property of their respective owners. 13. contact information for additional information, please visit: http://www .nxp.com for sales of?ce addresses, send an email to: salesad dresses@nxp.com document status [1] [2] product status [3] de?nition objective [short] data sheet development this document contains data from the objective speci?cation for product development. preliminary [short] data sheet quali?cation this document contains data from the preliminary speci?cation. product [short] data sheet production this document contains the product speci?cation.
nxp semiconductors pesdxl4uf/g/w low capacitance unidirectional quadruple esd protection diode arrays ? nxp b.v. 2008. all rights reserved. for more information, please visit: http://www.nxp.com for sales office addresses, please send an email to: salesaddresses@nxp.com date of release: 28 february 2008 document identifier: pesdxl4uf_g_w_4 please be aware that important notices concerning this document and the product(s) described herein, have been included in section legal information. 14. contents 1 product pro?le . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.1 general description. . . . . . . . . . . . . . . . . . . . . . 1 1.2 features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.3 applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.4 quick reference data. . . . . . . . . . . . . . . . . . . . . 2 2 pinning information . . . . . . . . . . . . . . . . . . . . . . 2 3 ordering information . . . . . . . . . . . . . . . . . . . . . 3 4 marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 5 limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3 6 characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5 7 application information. . . . . . . . . . . . . . . . . . 10 8 package outline . . . . . . . . . . . . . . . . . . . . . . . . 11 9 packing information. . . . . . . . . . . . . . . . . . . . . 12 10 soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 11 revision history . . . . . . . . . . . . . . . . . . . . . . . . 15 12 legal information. . . . . . . . . . . . . . . . . . . . . . . 16 12.1 data sheet status . . . . . . . . . . . . . . . . . . . . . . 16 12.2 de?nitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 12.3 disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 12.4 trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 13 contact information. . . . . . . . . . . . . . . . . . . . . 16 14 contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17

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